Supersymmetry in Disorder and Chaos

Supersymmetry in Disorder and Chaos

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The development of the supersymmetry technique has led to significant advances in the study of disordered metals and semiconductors. The technique has proved to be of great use in the analysis of modern mesoscopic quantum devices, but is also finding applications in a broad range of other topics, such as localization and quantum chaos. This book provides a comprehensive treatment of the ideas and uses of supersymmetry. The first four chapters of the book set out the basic results and some straightforward applications of the technique. Thereafter, a range of topics is covered in detail, including random matrix theory, persistent currents in mesoscopic rings, transport in mesoscopic devices, localization in quantum wires and films, and the quantum Hall effect. Each topic is covered in a self-contained manner, and the book will be of great interest to graduate students and researchers in condensed matter physics and quantum chaos.
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Product details

  • Electronic book text
  • Cambridge University Press (Virtual Publishing)
  • Cambridge, United Kingdom
  • 1139243519
  • 9781139243513

Review quote

'Efetov has done a service to condensed matter physics by explaining the ins and outs of his method in a clear and comprehensive monograph. It is likely to become a classic in the field. The book is indispensible for researchers who use or who would like to use the supersymmetry technique ... I would recommend it to anyone with an interest in modern techniques of theoretical physics.' C. W. J. Beenakker, Endeavour '... a clear, readable and comprehensive introduction to this application of supersymmetry.' I. D. Lawrie, Contemporary Physics
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Table of contents

1. Introduction; 2. Supermathematics; 3. Diffusion modes; 4. Nonlinear supermatrix à - model; 5. Perturbation theory and renormalization group; 6. Energy level statistics; 7. Quantum size effects in small metal particles; 8. Persistent currents in mesoscopic rings; 9. Transport through mesoscopic devices; 10. Universal parametric correlations; 11. Localization in systems with one-dimensional geometry; 12. Anderson metal-insulator transition; 13. Disorder in two dimensions; 14. Afterword.
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