Solid State Electronic Devices

Solid State Electronic Devices : International Edition

4.06 (233 ratings by Goodreads)
  • Paperback
By (author) 

List price: US$88.99

Currently unavailable

We can notify you when this item is back in stock

Add to wishlist

AbeBooks may have this title (opens in new window).

Try AbeBooks


For undergraduate-level courses in Electronic Devices.THE most widely used introduction to solid state electronic devices text, this book is designed to help students gain a basic understanding of semiconductor devices and the physical operating principles behind them. This two-fold approach 1) provides students with a sound understanding of existing devices, so that their studies of electronic circuits and systems will be meaningful, and 2) helps them develop the basic tools with which they can later learn about applications and the latest devices. The text provides one of the most comprehensive treatments of all the important semiconductor devices, and reflects the most current trends in the technology and theoretical understanding of the more

Product details

  • Paperback | 558 pages
  • 179 x 235 x 22mm | 834g
  • Pearson Education (US)
  • Pearson
  • United States
  • 5th edition
  • 0130261017
  • 9780130261014

Table of contents

1. Crystal Properties and Growth of Semiconductors. 2. Atoms and Electrons. 3. Energy Bands and Charge Carriers in Semiconductors. 4. Excess Carriers in Semiconductors. 5. Junctions. 6. Field-Effect Transistors. 7. Bipolar Junction Transistors. 8. Optoelectronic Devices. 9. Integrated Circuits. 10. Negative Conductance Microwave Devices. 11. Power Devices. Appendix I. Definitions of Commonly Used Symbols. Appendix II. Physical Constants and Conversion Factors. Appendix III. Properties of Semiconductor Materials. Appendix IV. Derivation of the Density of States in the Conduction Band. Appendix V. Derivation of Fermi-Dirac Statistics. Appendix VI. Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature. Appendix VII. Solid Solubilities of Impurities in Si. Appendix VIII. Diffusivities of Dopants in Si and SiO2. Appendix IX. Projected Range and Straggle as a Function of Implant Energy in Si, SiO2 and GaAs. more

About Ben G. Streetman

BEN G. STREETMAN is Dean of the College of Engineering at The University of Texas at Austin and holds the Dula D. Cockrell Centennial Chair in Engineering. He is a Professor of Electrical and Computer Engineering and was the founding Director of the Microelectronics Research Center. He has taught at the University of Illinois at Urbana-Champaign as well as the University of Texas at Austin. He has received numerous awards including the Education Medal of IEEE, The Frederick Emmons Terman Medal of the ASEE, and membership in the National Academy of Engineering. He has published more than 270 articles in the technical literature. Thirty-three students of Electrical Engineering, Materials Science, and Physics have received their Ph.D.s under his direction. SANJAY BANERJEE is the Cullen Trust Endowed Professor of Electrical and Computer Engineering, and Director of the Microelectronics Research Center at The University of Texas at Austin. He has more than 225 archival refereed publications and 12 U.S. patents, and has supervised 18 Ph.D. students. His honors include the NSF Presidential Young Investigator Award (1988), the Texas Atomic Energy Centennial Fellowship (1990-1997), Distinguished National Lecturer for the IEEE Electron Devices Society (1997-), and Fellow of the IEEE (1996).show more

Rating details

233 ratings
4.06 out of 5 stars
5 44% (102)
4 31% (73)
3 15% (35)
2 7% (17)
1 3% (6)
Book ratings by Goodreads
Goodreads is the world's largest site for readers with over 50 million reviews. We're featuring millions of their reader ratings on our book pages to help you find your new favourite book. Close X