Silicon-Germanium Strained Layers and Heterostructures: Volume 74

Silicon-Germanium Strained Layers and Heterostructures: Volume 74 : Semi-conductor and semi-metals series

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Description

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices.

Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.
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Product details

  • Hardback | 322 pages
  • 156 x 232 x 18mm | 639.58g
  • Academic Press Inc
  • San Diego, United States
  • English
  • Revised
  • 2nd Revised edition
  • 0127521836
  • 9780127521831

Table of contents

Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation; strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure Bipolar Transistors; FETs and other devices.
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About M. Willander

Edited by Suresh Jain and M Willander
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