SiC Materials and Devices: Volume 52

SiC Materials and Devices: Volume 52

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Description

This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
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Product details

  • Hardback | 420 pages
  • 160 x 230 x 34mm | 879.98g
  • Academic Press Inc
  • San Diego, United States
  • English
  • 0127521607
  • 9780127521602

Table of contents

K. Jarrendahl and R.F. Davis, Materials Properties and Characterization of SiC. V.A. Dmitriev and M.G. Spencer, SiC Fabrication Technology: Growth and Doping. V. Saxena and A.J. Steckl, Silicon Carbide Materials and Devices. M. Shur, SiC Transistors. C.D. Brandt, R.C. Clarke, R.R. Siergiej, J.B. Casady, and A.W. Morse, SiC for Applications in High Power Electronics. R.J. Trew, SiC Microwave Devices. C. Carter, J. Edmond, H. Kong, G. Negley, M. Leonard, K. Doverspike, W. Weeks, A. Suvorov, and D. Waltz, SiC-Based UV Photodiodes and Light Emitting Diodes. H. Morkoc, Beyond Silicon Carbide! II-V Nitride Based Heterostructures and Devices. Subject Index.
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About Robert K. Willardson

Prof. Dr. Eicke R. Weber, Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany
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