Semiconductors and Semimetals: Gallium Nitride (GaN) v. 50

Semiconductors and Semimetals: Gallium Nitride (GaN) v. 50

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Description

Gallium Nitride (GaN) has become the most important semiconductor material under study worldwide today. The general interest in this new materials system is growing stronger, especially with the announcement of the first GaN laser. There is an entire range of important applications which are detailed in this book. The combination of properties offered by GaN, such as direct bandgap, large range of energy bandgaps in the alloy system, and extraordinary mechanical stability, makes this material extremely important for future industrial applications as well.
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Product details

  • Hardback | 500 pages
  • 152.4 x 228.6 x 31.75mm | 408.23g
  • Academic Press Inc
  • San Diego, United States
  • English
  • b&w illustrations, index
  • 0127521585
  • 9780127521589

Table of contents

Metal-organic chemical vapour deposition (MOCVD) of Group III nitrides, S.P. DenBaars, S. Keller; Growth of the Group IIIA nitrides b reactive sputtering, W.A. Bryden, T.J. Kistenmacher; Thermochemistry of III-N semiconductors, N. Newman; Etching of III-nitrides, S.J. Pearton, R.J. Shul; Indium-based nitrides compounds, S.M. Bedair; Crustal structure of Group III nitrides, A. Trampert et al; Electronic and optical properties of III-v nitride-based quantum wells and superlattices, H. Markoc et al; Doping in the II-nitrides, K. Doverspike, J.I. Pankave; Pressure studies of defects and impurities in gallium nitride, T. Suski, P. Perlin; Optical properties of GaN, B. Monemar; Band structure of the Group III nitrides, W.R.L. Lambrecht; Phonons and phase transitions in GaN, N.E. Christensen, P. Perlin; Applications, S. Nakamura; Lasers, I. Akasaki, H. Amano; III-v nitrides based X-Ray detector, C.H. Qiu, J.I. Pankawe; Nonvolatile random-access memories in wide band-gap semiconductors, J.A. Cooper, Jr.
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