Semiconductor Lasers I
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Semiconductor Lasers I : Fundamentals

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Description

This book covers the device physics of semiconductor lasers in five chapters written by recognized experts in this field. The volume begins by introducing the basic mechanisms of optical gain in semiconductors and the role of quantum confinement in modern quantum well diode lasers. Subsequent chapters treat the effects of built-in strain, one of the important recent advances in the technology of these lasers, and the physical mechanisms underlying the dynamics and high speed modulation of these devices. The book concludes with chapters addressing the control of photon states in squeezed-light and microcavity structures, and electron states in low dimensional quantum wire and quantum dot lasers.

The book offers useful information for both readers unfamiliar with semiconductor lasers, through the introductory parts of each chapter, as well as a state-of-the-art discussion of some of the most advanced semiconductor laser structures, intended for readers engaged in research in this field. This book may also serve as an introduction for the companion volume, Semiconductor Lasers II: Materials and Structures, which presents further details on the different material systems and laser structures used for achieving specific diode laser performance features.
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Product details

  • Hardback | 453 pages
  • 164.3 x 237.5 x 35.3mm | 985.33g
  • Academic Press Inc
  • San Diego, United States
  • English
  • 1
  • 0123976308
  • 9780123976307

Table of contents

B. Zhao and A. Yariv, Quantum Well Semiconductor Lasers. A. Adams, E.P. O'Reilly, and M. Silver, Strained Layer Quantum Well Lasers. R. Nagarajan and J.E. Cowers, High Speed Lasers. E. Kapon, Quantum Wire and Quantum Dot Lasers. Y. Yamamoto, S. Inoue, G. Bjork, H. Heitmann, and F. Matinaga, Quantum Optics Effects in Semiconductor Lasers
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Review quote

"... a valuable and up-to-date reference for the whole field of circuit aspects of high speed semiconductor devices." --MICROELECTRONICS JOURNAL
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About Eli Kapon

Eli Kapon received his Ph.D. in Physics from Tel Aviv University, Israel, in 1982. He was a Research Fellow at the California Institute of Technology, Pasadena, CA and Member of Technical Staff and District Manager at Bellcore, Red Bank, New Jersey, before assuming his current position of Professor of Physics of Nanostructures at the Swiss Federal Institute of Technology in Lausanne. His research interests have ranged from semiconductor lasers to integrated optoelectronics and, more recently, low-dimensional quantum nanostructures.
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