Semiconductor Device and Failure Analysis

Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy

By (author) 

Free delivery worldwide

Available. Dispatched from the UK in 2 business days
When will my order arrive?

Description

The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference:
* Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability.
* Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM
* Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors.
Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals.
show more

Product details

  • Hardback | 288 pages
  • 186 x 261 x 21mm | 728g
  • John Wiley & Sons Ltd
  • Chichester, United Kingdom
  • English
  • 1. Auflage
  • w. figs.
  • 047149240X
  • 9780471492405

Back cover copy

The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference:
* Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability.
* Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM
* Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors.
Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals.
show more

Table of contents

Introduction; Instrumentation - The Photon Emission Microscope; Design of a Photon Emission Microscope for Spectroscopic Analysis; Characterization of Photon Emission Spectra Under Different Device Bias Conditions; Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under Hot-Carrier Stressing; Photon Emisson from MOSFETs under High-Field Impulse Stressing; Photon Emission from Metal-Oxide-Semiconductor (MOS) Capacitor Structures; Index.
show more

Review Text

"This reference details the principles of design, calibration, and useof photon emission microscopy (PEM) as a fault localization technique used for analyzing device reliability and failure." (SciTech Book News Vol. 25, No. 2 June 2001)
show more

Review quote

"This reference details the principles of design, calibration, and use of photon emission microscopy (PEM) as a fault localization technique used for analyzing device reliability and failure." (SciTech Book News Vol. 25, No. 2 June 2001)
show more

About Wai-Kin Chim

Wai Kin Chim is the author of Semiconductor Device and Failure Analysis: Using Photon Emission Microscopy, published by Wiley.
show more