Oxygen in Silicon: Oxygen in Silicon v. 42

Oxygen in Silicon: Oxygen in Silicon v. 42

5 (1 rating by Goodreads)
Other adaptation by  , Other adaptation by  , Other adaptation by  , Volume editor 

List price: US$357.01

Currently unavailable

We can notify you when this item is back in stock

Add to wishlist

AbeBooks may have this title (opens in new window).

Try AbeBooks

Description

This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. The key features: comprehensive study of the behavior of oxygen in silicon; silicon crystals for VLSI and ULSI applications are discussed; thorough coverage from crystal growth to device fabrication; edited by technical experts in the field; written by recognized authorities from industrial and academic institutions; useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research; and 297 original line drawings.
show more

Product details

  • Hardback | 679 pages
  • 152 x 229 x 31.75mm | 1,098g
  • Academic Press Inc
  • San Diego, United States
  • English
  • 297 line drawings, index
  • 0127521429
  • 9780127521428

Table of contents

F.Shimura, Introduction to Oxygen in Silicon. W. Lin, The Incorporation of Oxygen into Silicon Crystals. T.J. Shaffner and D.K. Schroder, Characterization Techniques for Oxygen in Silicon. W.M. Bullis, Oxygen Concentration Measurement. S.M. Hu, Intrinsic Point Defects in Silicon. B. Pajot, Some Atomic Configurations of Oxygen. J. Michel and L.C. Kimerling, Electrical Properties of Oxygen in Silicon. R.C. Newman and R. Jones, Diffusion of Oxygen in Silicon. T.Y. Tan and W.J. Taylor, Mechanisms of Oxygen Precipitation: Some Quantitative Aspects. M. Schrems, Simulation of Oxygen Precipitation. K. Sumino and I. Yonenaga, Oxygen Effect on Mechanical Properties. W.Bergholz, Grown-in and Process-Induced Defects. F. Shimura, Intrinsic/Internal Gettering. H. Tsuya, Oxygen Effect on Electronic Device Performance. Subject Index.
show more

Rating details

1 ratings
5 out of 5 stars
5 100% (1)
4 0% (0)
3 0% (0)
2 0% (0)
1 0% (0)
Book ratings by Goodreads
Goodreads is the world's largest site for readers with over 50 million reviews. We're featuring millions of their reader ratings on our book pages to help you find your new favourite book. Close X