Preface. Microporous silicon: formation mechanism and preparation method; V. Lehmann. Electrochemical and chemical behaviour of porous silicon layers: the role of the material wettability and its high specific surface area; A. Halimaoui. Fabrication of Si nanostructures for light emission study; H.I. Liu, D.K. Biegelsen, N.M. Johnson, F.A. Ponce, N.I. Maluf, R.F.W. Pease. Light emission from porous silicon and other self-organised low dimensional systems; B. Hamilton, S. Gardelis. Preparation and properties of thin siloxene films on silicon; M. Rosenbauer, M.S. Brandt, H.D. Fuchs, A. Hoepner, A. Breitschweddt, M. Stutzmann. Modelling of porous structures formation during electrochemical treatment of materials; V.P. Parkhutik, J.M. Martinez-Duart, J.M. Albella. Electronic charge trapping effects in porous silicon; L. Pavesi, L. Calliari, E. Zanghellini, G. Mariotto, M. Anderle, O. Bisi. Mechanical, optical and electrical properties of porous silicon prepared under clean conditions; Y. Diawara, J.F. Currie, A. Yelon. The influence of microelectronic processing steps on the properties of porous silicon layers; H. Munder, M.G. Berger, St. Frohnhoff, M. Thoenissen, H. Luth, W. Theiss, L. Kupper. Progress towards understanding and exploiting the luminescent properties of highly porous silicon; L.T. Canham. `White' photoluminescence from electrochemically attacked silicon; A. Cameron, X. Chen, C. Trager Cowan, D. Uttamchandani, K.P. O'Donnell. Electrochemical investigation of the electroluminescent properties of porous silicon; F. Muller, R. Herino, M. Ligeon, S. Billat, F. Gaspard, R. Romestain, J.C. Vial, A. Bsiesy. Phenomenological properties of the fast (blue) and slow (red) components in the photoluminescence of porous silicon;J.C. Vial, I. Mihalcescu. Electroluminescence from porous silicon; F. Kozlowski, P. Steiner, W. Lang. Optoelectronic properties of porous silicon; N. Koshida. Voltage-tunable electroluminescence of porous silicon; A. Bsiesy, F. Muller, M. Ligeon, F. Gaspard, R. Herino, R. Romestain, J.C. Vial. Studies of porous silicon by electron microscopy; A.G. Cullis. Scanning probe microscopies of luminescent porous silicon layers; Ph. Dumas, M. Gu, C. Syrykh, F. Salvan, J.K. Gimzewski, O. Vatel, A. Hallimaoui. In-situ combined infrared and photoluminescence investigation of porous silicon during its etching; V.M. Dubin, F. Ozanam, J.-N. Chazalviel. Near surface states in Si and their possible role in the luminescence of porous silicon; D. Bois, J.M. Debever. Porous electroluminescence mechanisms and defect analysis; J.F. Harvey, E.H. Poindexter, D.C. Morton, F.C. Rong, R.A. Lux, R. Tsu. Defect and structure analysis of n+ and p+-type porous silicon by the Electron Paramagnetic Resonance technique; H.J. von Bardeleben, D. Stievenard, A. Grosman, C. Ortega, J. Siejka. Photoluminescence and optically detected magnetic resonance investigations on porous silicon; A. Kux, D.M. Hofmann. Effects of the reduction of dielectric constant in nanoscale silicon; R. Tsu, D. Babic. Quantum effects in porous silicon; M. Voos, D. Delalande. Electronic properties of low dimensional silicon structures; S. Ossicini, A. Fasolino, F. Bernardini. Role of silicon molecules and crystallites in the luminescence of porous silicon; C. Delerue, G. Allan, M. Lannoo. Localisation of excitons on a quantum wire of fluctuating width; K.P. O'Donnell, F. Yang, E.J. Austin. Index.