Molecular Beam Epitaxy

Molecular Beam Epitaxy : From Research to Mass Production

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Description

This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a `how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.

MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage.
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Product details

  • Hardback | 744 pages
  • 218 x 278 x 34mm | 1,905.08g
  • United States
  • English
  • New
  • 012387839X
  • 9780123878397

Table of contents

1. Molecular Beam Epitaxy: Fundamentals, Historical Background and Future Prospects; 2. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future; 3. Growth of Semiconductor Nanowires by Molecular Beam Epitaxy; 4. Droplet Epitaxy of Nanostructures; 5. Self-assembled Quantum Dots; 6. Migration Enhanced Epitaxy of Low Dimensional Structures; 7. Surfactant-modified Epitaxy; 8. MBE Growth of High Mobility 2DEG; 9. MBE of GaAsBi; 10. Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys; 11. MBE of Dilute Nitride Optoelectronic Devices; 12. The Effects of Antimony During MBE Growth; 13. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications; 14. In-rich InGaN; 15. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices; 16. Epitaxial Growth f Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors; 17. MBE of Semiconducting Oxides; 18. ZnO Materials and Devices grown by MBE; 19. MBE of Complex Oxides; 20. Epitaxial Systems Combining Oxides and Semiconductors; 21. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductor; 22. Epitaxial Magnetic Layers Grown by MBE : Model Systems to Study the Physics in Nanomagnetism and Spintronic; 23. Atomic Layer-by-Layer Molecular Beam Epitaxy of Superconducting and Magnetic Materials; 24. MBE of Semimagnetic Quantum Dots; 25. MBE Growth of Graphene; 26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers; 27. Molecular Beam Epitaxial Growth and Exotic Electronic Structure of Topological Insulators; 28. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth; 29. MBE of II-VI Lasers; 30. MBE Growth of Terahertz Quantum Cascade Lasers; 31. MBE as a Mass Production Technique; 32. Mass production of optoelectronic devices: LEDs, lasers, VCSELs; 33. Mass Production of Sensors Grown by MBE
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Review Text

"Molecular beam epitaxy is the process of depositing atoms or molecules onto a crystalline substrate under conditions of high or ultra-high vacuum. The substrate's crystal structure provides a template for the particles in the beam to organize themselves as they deposit onto the substrate. The technique can be put to a remarkably broad set of uses. In this 31 chapter volume, editor Henini.brings together a diverse set of physicists, electrical and mechanical engineers, and nanotechnologists to cover many of today's applications."-- Reference & Research Book News, December 2013
"Molecular beam epitaxy is the process of depositing atoms or molecules onto a crystalline substrate under conditions of high or ultra-high vacuum. The substrate's crystal structure provides a template for the particles in the beam to organize themselves as they deposit onto the substrate. The technique can be put to a remarkably broad set of uses. In this 31 chapter volume, editor Henini.brings together a diverse set of physicists, electrical and mechanical engineers, and nanotechnologists to cover many of today's applications."-- Reference & Research Book News, December 2013
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Review quote

"Molecular beam epitaxy is the process of depositing atoms or molecules onto a crystalline substrate under conditions of high or ultra-high vacuum. The substrate's crystal structure provides a template for the particles in the beam to organize themselves as they deposit onto the substrate. The technique can be put to a remarkably broad set of uses. In this 31 chapter volume, editor Henini...brings together a diverse set of physicists, electrical and mechanical engineers, and nanotechnologists to cover many of today's applications."--Reference & Research Book News, December 2013
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About Mohamed Henini

Dr M. Henini has over 20 years' experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.
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