Microwave Field-Effect Transistors
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Microwave Field-Effect Transistors : Theory, design and applications

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Description

This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations. Perhaps the most comprehensive text on GaAs FET technology and its practical application. It covers the use of MESFET devices in microwave circuits, such as low-noise amplifiers, mixers, oscillators, power amplifiers, switches and multipliers. This text is a classic reference for all engineers involved in the development of solid state microwave devices.
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Product details

  • Hardback | 704 pages
  • 154.9 x 231.1 x 48.3mm | 1,179.35g
  • New York, United States
  • English
  • 3rd edition
  • 1884932509
  • 9781884932502