Hydrogen in Semiconductors

Hydrogen in Semiconductors

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Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This 16 chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III-V semiconductors. Features and benefits include in-depth coverage of hydrogen in silicon available in a single source, an extensive chapter devoted to the neutralization of defects in III-V semi-conductors, and both experimental and theoretical studies to provide a comprehensive reference.
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Product details

  • Hardback | 632 pages
  • 160.02 x 233.68 x 25.4mm | 1,065.94g
  • Academic Press Inc
  • San Diego, United States
  • English
  • index
  • 0127521348
  • 9780127521343

Table of contents

Introduction, J.I.Pankove and N.M.Johnson; hydrogenation methods, C.H.Seager; hydrogenation of defects in crystalline silicon, hydrogen passivation of damage centers in semiconductors, J.W.Corbett et al; neutralization of deep levels in silicon, S.J.Pearton; neutralization of shallow acceptors in silicon, J.I.Pankove; neutralization of donor dopants and formation of hydrogen-induced defects in n-type silicon, N.M.Johnson; vibrational spectroscopy of hydrogen-related defects in silicon, M.Stavola and S.J.Pearton; hydrogen in semiconductors - ion beam techniques, A.D.Marwick; hydrogen migration and solubility in silicon, C.Herring and N.M.Johnson; hydrogen-related phenomena in crystalline germanium, E.E.Haller; hydrogen diffusion in amorphous silicon, J.Kakalios; neutralization of defects and dopant sin III-V semiconductors, J.Chevallier et al; computational studies of hydrogen-containing complexes in semiconductors, G.G.DeLeo and W.B.Fowler; muonium in semiconductors, R.F.Kiefl and T.L.Estle; theory of isolated interstitial hydrogen and muonium in crystalline semiconductors, C.G.Van de Walle.
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