High Pressure Semiconductor Physics I: Volume 54

High Pressure Semiconductor Physics I: Volume 54

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Description

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Volumes 54 and 55 present contributions by leading researchers in the field of high pressure semiconductors. Edited by T. Suski and W. Paul, these volumes continue the tradition of well-known but outdated publications such as Brigman's The Physics of High Pressure (1931 and 1949) and High Pressure Physics and Chemistry edited by Bradley.
Volumes 54 and 55 reflect the industrially important recent developments in research and applications of semiconductor properties and behavior under desirable risk-free conditions at high pressures. These developments include the advent of the diamond anvil cell technique and the availability of commercial piston cylinder apparatus operating at high hydrostatic pressures. These much-needed books will be useful to both researchers and practitioners in applied physics, materials science, and engineering.
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Product details

  • Hardback | 577 pages
  • 160 x 230 x 32mm | 938.95g
  • Academic Press Inc
  • San Diego, United States
  • English
  • 0127521623
  • 9780127521626

Table of contents

W. Paul, High Pressure in Semiconductor Physics: A Historical Overview. N.E. Christensen, Electronic Structure Calculations for Semiconductors under Pressure. R.J. Nelmes and M.I. McMahon, Structural Transitions in the III-V and II-VI and group-IV Semiconductors Under Pressure. A.R. Goni and K. Syassen, Optical Properties of Semiconductors Under Pressure. P. Trautman, M. Baj, and J.M. Baranowski, Defects: Hydrostatic Pressure and Uniaxial Stress in Investigations of the EL2 Defect in GaAs. M.-f. Li and P.Y. Yu, High Pressure Study of DX enters Using Capacitance Techniques. T. Suski, Spatial Correlations of Impurity Charges in Doped Semiconductors. N. Kuroda, Pressure Effects on the Electronic Properties of Diluted Magnetic Semiconductors. Chapter References. Subject Index.
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About Robert K. Willardson

Prof. Dr. Eicke R. Weber, Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany
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