Heterostructure Epitaxy and Devices

Heterostructure Epitaxy and Devices

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Description

This volume contains a selection of the papers contributed to the NATO advanced research workshop of the same name, held near Bratislava in October 1995. Topics discussed include: epitaxial growth; heterostructures; composite systems; characterization; and devices.
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Product details

  • Hardback | 323 pages
  • 160 x 240 x 25.4mm | 751g
  • Dordrecht, Netherlands
  • English
  • 1996 ed.
  • 96 Illustrations, black and white; XIII, 323 p. 96 illus.
  • 0792340183
  • 9780792340188

Table of contents

Section I: Epitaxial Growth. Simulation of III-V Layer Growth; Y. Arima, T. Irisawa. Real Time Monitoring of Epitaxial Growth; W. Richter, et al. Influence of Carrier Gas on AlAs, GaAs and InP MOCVD Growth; S. Hasenoehrl, et al. LP-MOVPE of III-V Semiconductors Using Highly Pure N2 as the Carrier Gas.; H. Hardtdegen, et al. Dependence of Properties of LP MOCVD InGaP Layers on Growth Conditions; R. Judela, et al. Growth of GaN MOCVD Layers on GaN Single Crystals; K. Pakula, et al. Electrical and Optical Properties of Te-Doped GaSb Grown by MOVPE; K. Hjelt, T. Tuomi. Computer Simulations of Epitaxial Growth, Surface Kinetic Processes and RHEED Intensity Oscillations; D. Papajova, et al. Growth and Characterization of InP/Ga0.47 In0.53 As Deposited by MOMBE; M. v.d. Ahe, et al. Investigation of the Effect of GaAs Buffer Layers Grown by MBE at Different Temperatures on the Performance of GaAs MESFETs; M. Lagadas, et al. Multilayered GaAs VPE Structures for Micro Machining; K. Somogyi, et al. Growth of InP and GaInAsP Layers by Liquid-Phase Epitaxy Using Holmium Gettering and Doping; O. Prochazkova, et al. Meander Type LPE and High Temperature Stability of Elastically Strained GaInAsP/InP Layers; D. Nohavica, et al. Section II: Heterostructures. Scanning Tunneling Microscopy Characterization of Heterostructures; E.R. Weber, et al. Microscopic Origin of Femtosecond Spectral Hole Burning in Quantum Wells; A. Moskova, M. Mosko. Carrier Capture Due to Carrier-Carrier Interaction in Quantum Wells; K. Kalna, M. Mosko. Optical and Theoretical Study of GaAs Quantum Wells Embedded in GaAs/AlAs Superlattices; V. Donchev, et al. MOCVD Growth and Characterization of InAs/GaAsSuperlattices; M. erniansky, et al. Electrical Characteristics of Epitaxial Al/AlxGa1-x As/n- Al0.25 Ga0.75 As Heterostructures; Zs.J. Horvath, L. Dozsa. Investigation of a GaAs Heterostructure with an AlAs Potential Barrier by DLTS Measurements; L. Stuchlikova, et al. Effect of Heterobarriers on the DX Center in AlGaAsSb and in GaAlAs; L. Dozsa, et al. Mechanical Study of the Strained InxGa1-x As/GaAs Heterostructures; A. Nemcsics, et al. Hot Electrons at Semiconductor Heterojunctions; M. Horak. Section III: Composite Systems. III/V-Compound Semiconductors on Silicon; A. Schlachetzki. Crystal Growth of Column III Nitrides by OMVPE; I. Akasaki, H. Amano. GaSb Dots Grown on GaAs Surface by MOCVD; R. Bozek, et al. Crystallographic Tilting in Lattice- Mismatched Heteroepitaxy: A Kinetic Approach; F. Riesz. Optimization of MOVPE Growth for InGaAs on (001)Si; H.-H. Wehmann, et al. SEM-Based Characterization Techniques for Strongly Mismatched Heteroepitaxy; E. Peiner, et al. Defect Characterization of Strained InGaAs Structures Prepared on InP and GaAs; R. Srnanek, et al. Influence of the Temperature on the Morphology and Crystal Quality of MBE Grown InAs/GAAs Heterostructures; L. Francesio, et al. Section IV: Characterization. Study of Fundamental Growth Mechanism by Atomic Force Microscopy; C.C. Hsu, et al. Characterisation of the Epitaxial Layers Using the Lift-Off Technique; J. Novak. Many Crystal X-Ray Diffractometry on Superlattices; V. Holy. Quantum Magnetotransport in Two-Dimenstional Electron Gas in InGaAs/InP Heterostructures; B. Poedoer, et al.
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