Gallium Nitride

Gallium Nitride

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Description

These two volumes present a complete description of the various methods of making and studying the crystal and electronic structure. The books also assist in determining the origin and the influence of defects in the intrinsic properties and of applying these materials for various optical (LEDs, lasers, detectors) and electronic (transistors, non-volatile memories) devices. These two volumes give a comprehensive description of both experimental and theoretical developments in the field of III-V nitrides over the past thirty years. The various chapters address issues related to crystal growth and structure, doping and alloy phenomena, band structure, optical and electronic properties, non-linear optical phenomena, the origin and the effect of strain in the hetero-epitaxy and the electronic structure, phonons, the theory and experimental observations of the effect of hydrogen, investigation of the electronic structure of defects using transport and magnetic resonance measurements, MQWs and superlattices, device processing and applications of these materials to LEDs, Lasers, Ultraviolet and X-ray Detectors, Transistors and non-volatile semiconductor memories.
The various chapters were written by experts and an attempt has been made to address the topics in a tutorial fashion,including an historical review,a description of the state of the art, anticipation of future developments, and presentation of a complete list of references. The level of treatment of the various topics is appropriate for graduate students, laboratory practitioners, as well as experts in the field.
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Product details

  • Paperback | 1005 pages
  • 152.1 x 228.6 x 65.8mm | 1,821.38g
  • Academic Press Inc
  • San Diego, United States
  • English
  • Reissue
  • 0125440553
  • 9780125440554
  • 2,117,753

Review quote

Readers can expect sufficient depth, breadth, and up-to-date information in every chapter. The modular and tutorial format also makes learning flexible and palatable. These two volumes should be a standard shelf item for anyone serious in or simply curious about GaN. --Jung Han, Yale Univ., MRS Bulletin, March 2001
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