Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

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Description

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of
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Product details

  • Hardback | 507 pages
  • 156 x 236 x 36mm | 899.99g
  • Dordrecht, Netherlands
  • English
  • 1998 ed.
  • 114 Illustrations, black and white; XI, 507 p. 114 illus.
  • 0792350073
  • 9780792350071

Table of contents

Preface. Introduction. 1. Recent Advances in Experimental Studies of SiO2 Films on Si. 2. Theory of the SiO2/Si and SiOxNy/Si Systems. 3. Growth Mechanism, Processing, and Analysis of (Oxy)nitridation. 4. Initial Oxidation and Surface Science Issues. 5. Electrical Properties and Microscopic Models of Defects. 6. Hydrogen/Deuterium Issues. 7. New Substrates (SiC, SiGe) and SOI Technologies. Appendix. Authors Index. List of Workshop Participants.
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