Electrothermal Analysis of VLSI Systems
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Electrothermal Analysis of VLSI Systems

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Description

This useful book addresses electrothermal problems in modern VLSI systems. It discusses electrothermal phenomena and the fundamental building blocks that electrothermal simulation requires. The authors present three important applications of VLSI electrothermal analysis: temperature-dependent electromigration diagnosis, cell-level thermal placement, and temperature-driven power and timing analysis.
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Product details

  • Hardback | 210 pages
  • 160 x 238.8 x 17.8mm | 589.68g
  • Dordrecht, Netherlands
  • English
  • 2002 ed.
  • 36 Illustrations, black and white; XXIII, 210 p. 36 illus.
  • 079237861X
  • 9780792378617

Table of contents

List of Figures. List of Tables. Preface. Acknowledgments. Part I: The Building Blocks. 1. Introduction. 2. Power Analysis for CMOS Circuits. 3. Temperature-Dependent MOS Device Modeling. 4. Thermal Simulation for VLSI Systems. 5. Fast-Timing Electrothermal Simulation. Part II: The Applications. 6. Temperature-Dependent Electromigration Reliability. 7. Temperature-Driven Cell Placement. 8. Temperature Driven Power and Timing Analysis. Index.
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Review quote

From the Foreword:

`Continuing increases in the levels of circuit integration and concomitant increases in performance are sustaining the trend of increasing power dissipation in VLSI systems. A consequence is that the impact of temperature on the successful operation and reliability of devices must be comprehended during the design process.....This text provides a comprehensive formulation of the electrothermal analysis problem beginning with a summary of the sources of power dissipation in CMOS circuits and followed by a formulation of the effect of temperature on MOS devices.'
Dr. Ralph K. Cavin, Vice President, Semiconductor Research Corporation
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