Electronic Materials and Devices

Electronic Materials and Devices

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This book provides the knowledge and understanding necessary to comprehend the operation of individual electronic devices that are found in modern micro-electronics. As a textbook, it is aimed at the third-year undergraduate curriculum in electrical engineering, in which the physical electronic properties are used to develop an introductory understanding to the semiconductor devices used in modern micro-electronics.

The emphasis of the book is on providing detailed physical insight into the microscopic mechanisms that form the cornerstone for these technologies. Mathematical treatments are therefore kept to the minimum level necessary to achieve suitable rigor.
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Product details

  • Hardback | 421 pages
  • 152.4 x 226.06 x 25.4mm | 408.23g
  • Academic Press Inc
  • San Diego, United States
  • English
  • 0122541618
  • 9780122541612

Table of contents

1. Introduction
1.1 Modern VLSI
1.2 The Driving Forces for Continued Integration Growth
1.3 Moore's Law
1.4 Types of Materials

2. The Crystalline Nature of Materials
2.1 The Various States of Matter
2.2 Space Lattices
2.3 Crystalline Directions
2.4 X-Ray Diffraction

3. The Wave Mechanics of Electrons
3.1 The Photoelectric Effect
3.2 Electrons as Waves
3.3 The Schroedinger Equation
3.4 Some Simple Potentials
3.5 Tunneling Through Barriers
3.6 Quantum Wells
3.7 The Particle in a Box
3.8 Atomic Energy Levels

4. Semiconductors
4.1 Periodic Potentials
4.2 Bloch's Theorem and Brillouin Zones
4.3 The Kronig-Penney Model
4.4 Nearest-Neighbor Coupling-The Tight-Binding Approach
4.5 Three Dimensions and the Band Structure for Si and GaAs
4.6 Effective Mass of the Electron
4.7 Alloys and Heterostructures
4.8 The Atoms in Motion
4.9 Types of Materials

5. Electrical Transport
5.1 Fermi-Dirac Statistics
5.2 Intrinsic Semiconductors
5.3 Extrinsic Semiconductors
5.4 Electrical Conductivity
5.5 Conductivity in a Magnetic Field
5.5.1 Low Magnetic Field
5.5.2 High Magnetic Field
5.5.3 The Quantum Hall Effect
5.6 Majority and Minority Carriers
5.7 Lifetimes, Recombination, and the Diffusion Equation
5.8 The Work Function

6. Semiconductor Devices
6.1 The p-n Junction
6.1.1 Electrostatics of the p-n Junction
6.1.2 Current Flow in p-n Junctions
6.1.3 Diodes Under Large Reverse Bias
6.2 The Bipolar Transistor
6.2.1 Current Flow in the BJT
6.2.2 The Current Gain a
6.3 The Metal-Semiconductor Junction
6.4 The Schottky-Gate Transistor
6.5 The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
6.5.1 The MOS Structure and the Surface Channel
6.5.2 The MOSFET Characteristics
6.6 The High-Electron-Mobility Transistor
6.7 Complementary MOS Structures
6.7.1 The Complementary Circuit
6.7.2 The DRAM Cell

7. Dielectric Material
7.1 Dielectric Effects
7.1.1 Lattice Polarization
7.1.2 Electronic Polarizability
7.2 Piezoelectric Effects
7.3 Ferroelectric Material
7.4 Pyroelectric Effects
7.5 Micro-Electro-Mechanical Structures

8. Optoelectronics
8.1 Photo-Detection Devices
8.1.1 Photoconductivity
8.1.2 Transverse Photo-Voltage
8.1.3 Pyroelectric Detectors
8.1.4 Photo-Diodes
8.2 Spontaneous and Stimulated Emission
8.3 Lasers
8.4 Semiconductor Lasers

9. Magnetic Materials
9.1 Magnetic Susceptibility
9.2 Diamagnetism
9.3 Paramagnetism
9.4 Ferromagnetism
9.5 Giant Magnetoresistance
9.6 Magnetic Memory

10. Superconductivity
10.1 Properties of Superconductors
10.2 The Meissner Effect
10.3 The London Equations
10.4 The BCS Theory
10.5 Superconducting Tunneling
10.6 High-Tc Materials

A. The Hydrogen Atom
A.1 Separation of the Angular Equation
A.2 The Radial Equation

B. Impurity Insertion
B.1 Impurity Diffusion
B.2 Ion Implantation

C. Semiconductor Properties

D. Some Fundamental Constants

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About David K. Ferry

David Ferry is currently Regents' Professor of Electrical Engineering at Arizona State University (since 1983). Previously, he was on the faculty of Texas Tech University and Colorado State University, and served briefly at the Office of Naval Research. He received the 1999 Cledo Brunetti Award from the IEEE for advances in nano-electronic theory and experiment. He is a fellow of both the IEEE and the APS. He recently received ASU's 2000 award for graduate mentorship. He is the author/co-author of many books and book chapters, and more than 500 scholarly publications. He received his Ph.D. from the University of Texas in 1966 and spent one year at the Boltzmann Institute and University of Vienna, both in Vienna, Austria. Jonathan Bird is Associate Professor of Electrical Engineering at Arizona State University. He received his Ph.D. in Physics from the University of Sussex (UK) in 1990, before spending a year at the University of Tsukuba as a visiting Fellow of the Japan Society for the Promotion of Science, followed by 5 years as a researcher in the Frontier Research Program of the Institute of Physical and Chemical Research (RIKEN) in Japan. Professor Bird is co-author of more than 100 peer-reviewed articles and book chapters and is also a member of the IEEE and the Institute of Physics (UK).
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