The Electrical Characterisation of Semiconductors : Majority Carrier Properties
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Description
This is the first comprehensive and unified treatment to describe the physical principles behind experimental techniques used for measuring the electrical properties of semiconductors. The principles involved are illustrated by reference to selected examples drawn from the world of semiconductor materials. By concentrating on the physical principles of each technique and enumerating its inherent limitations, the authors have produced a text which should be helpful in solving a variety of problems in semiconductor characterization and one which will not be overtaken quickly by development in the materials themselves.
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Product details
- Hardback | 768 pages
- 152 x 229 x 44.45mm | 1,212g
- 01 Aug 1992
- Elsevier Science Publishing Co Inc
- Academic Press Inc
- San Diego, United States
- English
- 0125286279
- 9780125286275
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Table of contents
Measurement of resistivity; galvanomagnetic effects; resistivity and hall effect profiling of non-uniform material; capacitance-voltage profiling; interpretation of capacitance-voltage profiles; deep states in depletion regions; deep level transient spectrocopy of majority carrier traps; other techniques for study of majority carrier traps; thermal emission from minority carrier traps; deep state carrier capture cross sections; depth profiling of deep states; optically induced emission from deep states.
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