Compound Semiconductor Device Physics
This work provides a rigorous treatment of compound semiconductor device physics. An understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-,two- and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed discussion of these topics, this book is useful for both the researcher and the student. Although the emphasis of this text is on compound semi-conductor devices many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions.
- Hardback | 848 pages
- 159 x 236 x 38.1mm | 1,198g
- 01 Feb 1992
- Elsevier Science Publishing Co Inc
- Academic Press Inc
- San Diego, United States
- glossary, index
Table of contents
Review of semiconductor physics, properties, and device implications; mathematical treatments; transport across junctions; metal semiconductor field effect transistors; insulator and heterostructure field effect transistors; heterostructure bipolar transistors; hot carrier and tunnelling structures; scaling and operational limitations. Appendixes: network parameters and relationships; properties of compound semiconductors; physical constraints and conversion units.