Advances in Electronics and Electron Physics: Germanium-Silicon Strained Layers and Heterostructures Supplement 24

Advances in Electronics and Electron Physics: Germanium-Silicon Strained Layers and Heterostructures Supplement 24

Volume editor  , Volume editor 

List price: US$153.00

Currently unavailable

Add to wishlist

AbeBooks may have this title (opens in new window).

Try AbeBooks

Description

Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSistrained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs and long wavelength (1 to 20 um) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible tomanufacture monolithic Si integrated circuits containing heterojunction devices. Jains monograph, the first of its kind, covers the fundamental physics of strained layers, theory, design, and characteristics of the GeSi heterostructure devices.
show more

Product details

  • Hardback | 294 pages
  • 165 x 241 x 25.4mm | 699g
  • Academic Press Inc
  • San Diego, United States
  • English
  • references, index
  • 0120145987
  • 9780120145980

Table of contents

Structure of strained layers; the kinetics of strained relaxation; band structure and related properties; optical properties; Heterostructure Bipolar Transistors; IR detectors; FETS and other detectors.
show more