• Thin Film Heusler Compounds Manganese Nickel Gallium.

    Thin Film Heusler Compounds Manganese Nickel Gallium. (Paperback) By (author) Catherine Ann Jenkins

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    DescriptionMultiferroic Heusler compounds Mn3--xNi xGa (x=0,1,2) have a tetragonal unit cell that can variously be used for magneto-mechanically coupled shape memory ( x=1,2) and spin-mechanical applications (x=0). The first fabrication of fully epitaxial thin films of these and electronically related compounds by sputtering is discussed. Traditional and custom lab characterization of the magnetic and temperature driven multiferroic behavior is augmented by more detailed synchrotron-based high energy photoemission spectroscopic techniques to describe the atomic and electronic structure. Integration of the MnNi2Ga magnetic shape memory compound in microwave patch antennas and active free-standing structures represents a fraction of the available and promising applications for these compounds. Prototype magnetic tunnel junctions are demonstrated by Mn3Ga electrodes with perpendicular anisotropy for spin torque transfer memory structures. The main body of the work concentrates on the definition and exploration of the material series Mn3--xNi xGa (x=0,1,2) and the relevant multiferroic phenomena exhibited as a function of preparation and external stimuli. Engineering results on each x=0,1,2 are presented with device prototypes where relevant. In the appendices the process of the materials design undertaken with the goal of developing new ternary intermetallics with enhanced properties is presented with a full exploration of the road from band structure calculations to device implementation. Cobalt based compounds in single crystal and nanoparticle form are fabricated with an eye to developing the production methods for new cobalt- and iron-based magnetic shape memory compounds for device applications in different forms. Mn2CoSn, a compound isolectronic and with similar atomic ordering to Mn2NiGa is experimentally determined to be a nearly half-metallic ferromagnet in contrast to the metallic ferrimagnetism in the parent compound. High energy photoemission spectroscopy is shown to be applicable to the analysis and observation of deeply buried metallic and semiconducting interface in an analysis of chalcopyrite solar cell heterolayers and model magnetic tunnel junctions with half-metalic Heusler electrodes.

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  • Full bibliographic data for Thin Film Heusler Compounds Manganese Nickel Gallium.

    Thin Film Heusler Compounds Manganese Nickel Gallium.
    Authors and contributors
    By (author) Catherine Ann Jenkins
    Physical properties
    Format: Paperback
    Number of pages: 120
    Width: 189 mm
    Height: 246 mm
    Thickness: 6 mm
    Weight: 227 g
    ISBN 13: 9781243665379
    ISBN 10: 1243665378

    BIC E4L: TEC
    Nielsen BookScan Product Class 3: T8.9
    BIC subject category V2: TB
    Ingram Subject Code: TE
    Warengruppen-Systematik des deutschen Buchhandels: 26800
    Libri: I-TE
    BISAC V2.8: TEC000000
    Proquest, Umi Dissertation Publishing
    Imprint name
    Proquest, Umi Dissertation Publishing
    Publication date
    01 September 2011
    Publication City/Country
    Charleston SC