Thin Film Heusler Compounds Manganese Nickel Gallium. (Paperback)
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DescriptionMultiferroic Heusler compounds Mn3--xNi xGa (x=0,1,2) have a tetragonal unit cell that can variously be used for magneto-mechanically coupled shape memory ( x=1,2) and spin-mechanical applications (x=0). The first fabrication of fully epitaxial thin films of these and electronically related compounds by sputtering is discussed. Traditional and custom lab characterization of the magnetic and temperature driven multiferroic behavior is augmented by more detailed synchrotron-based high energy photoemission spectroscopic techniques to describe the atomic and electronic structure. Integration of the MnNi2Ga magnetic shape memory compound in microwave patch antennas and active free-standing structures represents a fraction of the available and promising applications for these compounds. Prototype magnetic tunnel junctions are demonstrated by Mn3Ga electrodes with perpendicular anisotropy for spin torque transfer memory structures. The main body of the work concentrates on the definition and exploration of the material series Mn3--xNi xGa (x=0,1,2) and the relevant multiferroic phenomena exhibited as a function of preparation and external stimuli. Engineering results on each x=0,1,2 are presented with device prototypes where relevant. In the appendices the process of the materials design undertaken with the goal of developing new ternary intermetallics with enhanced properties is presented with a full exploration of the road from band structure calculations to device implementation. Cobalt based compounds in single crystal and nanoparticle form are fabricated with an eye to developing the production methods for new cobalt- and iron-based magnetic shape memory compounds for device applications in different forms. Mn2CoSn, a compound isolectronic and with similar atomic ordering to Mn2NiGa is experimentally determined to be a nearly half-metallic ferromagnet in contrast to the metallic ferrimagnetism in the parent compound. High energy photoemission spectroscopy is shown to be applicable to the analysis and observation of deeply buried metallic and semiconducting interface in an analysis of chalcopyrite solar cell heterolayers and model magnetic tunnel junctions with half-metalic Heusler electrodes.
- Published: 01 September 2011
- Format: Paperback 120 pages
- ISBN 13: 9781243665379 ISBN 10: 1243665378
Full bibliographic data for Thin Film Heusler Compounds Manganese Nickel Gallium.
- Thin Film Heusler Compounds Manganese Nickel Gallium.
- Authors and contributors
- Physical properties
- Format: Paperback
Number of pages: 120
Width: 189 mm
Height: 246 mm
Thickness: 6 mm
Weight: 227 g
- ISBN 13: 9781243665379
ISBN 10: 1243665378
BIC E4L: TEC
Nielsen BookScan Product Class 3: T8.9
BIC subject category V2: TB
Ingram Subject Code: TE
Warengruppen-Systematik des deutschen Buchhandels: 26800
BISAC V2.8: TEC000000